The characteristic of ‘ Toggle DDR infterface is to transfer data in both the rising edge of the clock and in the descent, halving the time required to perform a memory cycle compared to the interface SDR (base). Tohiba and Samsung have started producing NAND flash memory based on the version 1.0 interface Toggle DDR in 2010, enabling it to reach a speed of 66Mbps and 133Mbps in memories SLC MLC.

The latest version, toggle DDR 2.0, further doubles the interface speed up to 400 Mbps (approximately twice the bandwidth guaranteed interface ONFI 2.1 competitor, and equal to the interface bandwidth ONFI 3.0, announced in March, but which has not yet been implemented in any commercial solution).